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STripFET™ III 系列, 单 FET，MOSFET
结果:
79
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
结果：79
搜索条目:
STripFET™ III
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Package / Case | Operating Temperature | Grade | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Qualification |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-7, D²Pak (6 Leads + Tab) | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 180A (Tc) | 4.5mOhm @ 60A, 10V | 4V @ 250µA | 100 V | 10V | 114.6 nC @ 10 V | ±20V | 6665 pF @ 25 V | 315W (Tc) | H2PAK-6 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 35A (Tc) | 22mOhm @ 3A, 10V | 4V @ 250µA | 60 V | 10V | - | ±20V | - | 5W (Ta), 80W (Tc) | PowerFlat™ (5x6) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 120A (Tc) | 9.3mOhm @ 60A, 10V | 4V @ 250µA | 100 V | 10V | 57 nC @ 10 V | ±20V | 3305 pF @ 25 V | 250W (Tc) | H2Pak-2 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerVDFN | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 82A (Tc) | 8.4mOhm @ 8A, 10V | 4V @ 250µA | 100 V | 10V | 56 nC @ 10 V | ±20V | 3210 pF @ 25 V | 136W (Tc) | PowerFlat™ (5x6) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 40A (Tc) | 10.5mOhm @ 20A, 10V | 1V @ 250µA | 30 V | 5V, 10V | 14 nC @ 5 V | ±20V | 1434 pF @ 25 V | 60W (Tc) | I-PAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 80A (Tc) | 5.7mOhm @ 40A, 10V | 1V @ 250µA | 30 V | 5V, 10V | 32 nC @ 5 V | ±20V | 2805 pF @ 25 V | 95W (Tc) | I-PAK | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 80A (Tc) | 8.5mOhm @ 32A, 10V | 4V @ 250µA | 55 V | 10V | 45 nC @ 10 V | ±20V | 2200 pF @ 25 V | 110W (Tc) | TO-220 | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 80A (Tc) | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 40 V | 10V | 54 nC @ 10 V | ±20V | 2200 pF @ 25 V | 110W (Tc) | TO-220 | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | PowerSO-10 Exposed Bottom Pad | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 240A (Tc) | 2.6mOhm @ 120A, 10V | 4V @ 250µA | 75 V | 10V | 100 nC @ 10 V | ±20V | 6800 pF @ 25 V | 300W (Tc) | 10-PowerSO | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | PowerSO-10 Exposed Bottom Pad | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 200A (Tc) | 2.2mOhm @ 75A, 10V | 4V @ 250µA | 55 V | 10V | 100 nC @ 10 V | ±20V | 6800 pF @ 25 V | 300W (Tc) | 10-PowerSO | - | ||
.jpg "STD60N55F3") | 联系我们 | 80,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 80A (Tc) | 8.5mOhm @ 32A, 10V | 4V @ 250µA | 55 V | 10V | 45 nC @ 10 V | ±20V | 2200 pF @ 25 V | 110W (Tc) | DPAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | PowerSO-10 Exposed Bottom Pad | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 200A (Tc) | 1mOhm @ 80A, 10V | 2V @ 250µA | 24 V | 10V, 5V | 109 nC @ 10 V | ±20V | 7055 pF @ 15 V | 300W (Tc) | 10-PowerSO | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 30A (Tc) | 14.5mOhm @ 15A, 10V | 2.5V @ 250µA | 24 V | 5V, 10V | 20 nC @ 10 V | ±20V | 860 pF @ 15 V | 45W (Tc) | DPAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 60A (Tc) | 6mOhm @ 30A, 10V | 1.8V @ 250µA | 25 V | 5V, 10V | 22 nC @ 5 V | ±20V | 2050 pF @ 16 V | 70W (Tc) | DPAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 80A (Tc) | 6mOhm @ 40A, 10V | 2.5V @ 250µA | 40 V | 5V, 10V | 70 nC @ 10 V | ±16V | 2500 pF @ 25 V | 110W (Tc) | DPAK | - | ||
 | 联系我们 | 2,079 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 120A (Tc) | 7.5mOhm @ 70A, 10V | 4V @ 250µA | 75 V | 10V | 218 nC @ 10 V | ±20V | 5000 pF @ 25 V | 310W (Tc) | D2PAK | - | ||
| 联系我们 | 11,405 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 120A (Tc) | 7.5mOhm @ 70A, 10V | 4V @ 250µA | 75 V | 10V | 218 nC @ 10 V | ±20V | 5000 pF @ 25 V | 310W (Tc) | TO-220 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-7, D²Pak (6 Leads + Tab) | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 180A (Tc) | 2.6mOhm @ 60A, 10V | 4V @ 250µA | 55 V | 10V | 100 nC @ 10 V | ±20V | 6800 pF @ 25 V | 300W (Tc) | H²PAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | - | MOSFET (Metal Oxide) | STripFET™ III | - | 160A (Tc) | 3.3mOhm @ 80A, 10V | 1V @ 250µA | 30 V | 4.5V, 10V | 110 nC @ 4.5 V | ±16V | 5500 pF @ 25 V | 300W (Tc) | D2PAK | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | STripFET™ III | - | 120A (Tc) | 4.3mOhm @ 95A, 10V | 4V @ 250µA | 40 V | 10V | 130 nC @ 5 V | ±20V | 5800 pF @ 25 V | 310W (Tc) | D2PAK | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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