- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
OptiMOS™ 3 Series, 单 FET，MOSFET
结果:
29
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
结果：29
搜索条目:
OptiMOS™ 3
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Package / Case | Operating Temperature | Grade | Technology | Supplier Device Package | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 14,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO263-3 | OptiMOS™ 3 | - | 120A (Tc) | 75 V | 10V | 2mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | 300W (Tc) | - | ||
 | 1+ ¥63.0000 5+ ¥59.5000 10+ ¥56.0000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO220-3 | OptiMOS™ 3 | - | 120A (Tc) | 75 V | 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206 nC @ 10 V | ±20V | 14400 pF @ 37.5 V | 300W (Tc) | - | ||
| 1+ ¥61.2000 5+ ¥57.8000 10+ ¥54.4000 更多的价格 | 4,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO263-3 | OptiMOS™ 3 | - | 88A (Tc) | 200 V | 10V | 11mOhm @ 88A, 10V | 4.2V @ 260µA | 76 nC @ 10 V | ±20V | 650 pF @ 100 V | 250W (Tc) | - | ||
 | 1+ ¥45.0000 5+ ¥42.5000 10+ ¥40.0000 更多的价格 | 2,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO252-3-11 | OptiMOS™ 3 | - | 90A (Tc) | 40 V | 4.5V, 10V | 3.6mOhm @ 90A, 10V | 2V @ 45µA | 78 nC @ 10 V | ±20V | 6300 pF @ 20 V | 94W (Tc) | - | ||
 | 1+ ¥99.0000 5+ ¥93.5000 10+ ¥88.0000 更多的价格 | 36 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerSFN | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-HSOF-8-1 | OptiMOS™ 3 | - | 69A (Tc) | 250 V | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 86 nC @ 10 V | ±20V | 7000 pF @ 125 V | 375W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-SOIC (0.154", 3.90mm Width) | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | PG-DSO-8 | OptiMOS™ 3 | - | 11A (Ta) | 30 V | 4.5V, 10V | 8.3mOhm @ 14A, 10V | 2V @ 250µA | 27 nC @ 10 V | ±20V | 2100 pF @ 15 V | 1.56W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | Die | - | - | MOSFET (Metal Oxide) | Sawn on foil | OptiMOS™ 3 | - | - | 30 V | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO220-3-1 | OptiMOS™ 3 | - | 35A (Tc) | 30 V | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15 nC @ 10 V | ±20V | 1600 pF @ 15 V | 42W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | Die | - | - | MOSFET (Metal Oxide) | Die | OptiMOS™ 3 | - | - | 60 V | 10V | 100mOhm @ 2A, 10V | 4V @ 196µA | - | - | - | - | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | Die | - | - | MOSFET (Metal Oxide) | Die | OptiMOS™ 3 | - | - | 40 V | 10V | 50mOhm @ 2A, 10V | 4V @ 200µA | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO-263-3-2 | OptiMOS™ 3 | - | 50A (Tc) | 40 V | 4.5V, 10V | 9.3mOhm @ 50A, 10V | 2V @ 77µA | 28 nC @ 10 V | ±20V | 2100 pF @ 20 V | 47W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO220-3-1 | OptiMOS™ 3 | - | 30A (Tc) | 30 V | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | 38W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerTDFN | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | PG-TSDSON-8 | OptiMOS™ 3 | - | 12A (Ta), 44A (Tc) | 30 V | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 1500 pF @ 15 V | 2.5W (Ta), 28W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | -55°C ~ 175°C (TJ) | MOSFET (Metal Oxide) | PG-TO262-3 | OptiMOS™ 3 | - | 80A (Tc) | 100 V | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68 nC @ 10 V | ±20V | 4910 pF @ 50 V | 150W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | 8-PowerSMD, Gull Wing | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-HSOG-8-1 | OptiMOS™ 3 | - | 7.7A (Ta), 77A (Tc) | 250 V | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | 3.8W (Ta), 375W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO220-3 | OptiMOS™ 3 | - | 80A (Tc) | 80 V | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | 136W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | Die | - | - | MOSFET (Metal Oxide) | Die | OptiMOS™ 3 | - | - | 150 V | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-251-3 Stub Leads, IPak | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO251-3-11 | OptiMOS™ 3 | - | 90A (Tc) | 30 V | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51 nC @ 10 V | ±20V | 5300 pF @ 15 V | 94W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO262-3 | OptiMOS™ 3 | - | 137A (Tc) | 100 V | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | 214W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | TO-220-3 | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | PG-TO220-3-1 | OptiMOS™ 3 | - | 90A (Tc) | 60 V | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | 167W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速报价吗?
告诉我们您在找什么？