- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
HiPerFET™, TrenchT2™ Series, 单 FET，MOSFET
结果:
44
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Power Dissipation (Max)
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
结果：44
搜索条目:
HiPerFET™, TrenchT2™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Package / Case | Supplier Device Package | FET Type | Operating Temperature | Grade | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 1+ ¥16.2000 5+ ¥15.3000 10+ ¥14.4000 更多的价格 | 16,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 110A (Tc) | 4.5V @ 250µA | 150 V | 10V | 13mOhm @ 55A, 10V | 150 nC @ 10 V | ±20V | 8600 pF @ 25 V | 480W (Tc) | - | ||
 | 1+ ¥81.0000 5+ ¥76.5000 10+ ¥72.0000 更多的价格 | 15,680 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 | TO-247AD (IXFH) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 150A (Tc) | 4.5V @ 1mA | 175 V | 10V | 12mOhm @ 75A, 10V | 233 nC @ 10 V | ±20V | 14600 pF @ 25 V | 880W (Tc) | - | ||
| 1+ ¥270.0000 5+ ¥255.0000 10+ ¥240.0000 更多的价格 | 3,072 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 | TO-247AD (IXFH) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 320A (Tc) | 4V @ 250µA | 100 V | 10V | 3.5mOhm @ 100A, 10V | 430 nC @ 10 V | ±20V | 26000 pF @ 25 V | 1000W (Tc) | - | ||
 | 1+ ¥360.0000 5+ ¥340.0000 10+ ¥320.0000 更多的价格 | 2,425 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 320A (Tc) | 5V @ 8mA | 170 V | 10V | 5.2mOhm @ 60A, 10V | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | 1670W (Tc) | - | ||
 | 1+ ¥284.4000 5+ ¥268.6000 10+ ¥252.8000 更多的价格 | 1,330 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 310A (Tc) | 5V @ 8mA | 150 V | 10V | 4mOhm @ 60A, 10V | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | 1070W (Tc) | - | ||
 | 1+ ¥36.0000 5+ ¥34.0000 10+ ¥32.0000 更多的价格 | 450 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA (IXFA) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 130A (Tc) | 4.5V @ 1mA | 100 V | 10V | 9.1mOhm @ 65A, 10V | 130 nC @ 10 V | ±20V | 6600 pF @ 25 V | 360W (Tc) | - | ||
 | 1+ ¥216.0000 5+ ¥204.0000 10+ ¥192.0000 更多的价格 | 286 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 320A (Tc) | 4V @ 250µA | 100 V | 10V | 3.5mOhm @ 100A, 10V | 430 nC @ 10 V | ±20V | 26000 pF @ 25 V | 1kW (Tc) | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268AA | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 340A (Tc) | 4V @ 3mA | 75 V | 10V | 3.2mOhm @ 100A, 10V | 300 nC @ 10 V | ±20V | 19000 pF @ 25 V | 935W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268AA | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 320A (Tc) | 4V @ 250µA | 100 V | 10V | 3.5mOhm @ 100A, 10V | 430 nC @ 10 V | ±20V | 26000 pF @ 25 V | 1000W (Tc) | - | ||
.jpg "IXFX320N17T2") | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 Variant | PLUS247™-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 320A (Tc) | 5V @ 8mA | 170 V | 10V | 5.2mOhm @ 60A, 10V | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | 1670W (Tc) | - | ||
| 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 Variant | PLUS247™-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 360A (Tc) | 5V @ 8mA | 150 V | 10V | 4mOhm @ 60A, 10V | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | 1670W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 240A (Tc) | 5V @ 8mA | 150 V | 10V | 5.2mOhm @ 60A, 10V | 460 nC @ 10 V | ±20V | 32000 pF @ 25 V | 1250W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AA (IXFA) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 180A (Tc) | 4V @ 250µA | 100 V | 10V | 6mOhm @ 50A, 10V | 185 nC @ 10 V | ±20V | 10500 pF @ 25 V | 480W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 180A (Tc) | 4V @ 250µA | 100 V | 10V | 6mOhm @ 50A, 10V | 185 nC @ 10 V | ±20V | 10500 pF @ 25 V | 480W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-264-3, TO-264AA | TO-264AA (IXFK) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 360A (Tc) | 5V @ 8mA | 150 V | 10V | 4mOhm @ 60A, 10V | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | 1670W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 Variant | PLUS247™-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 520A (Tc) | 5V @ 8mA | 75 V | 10V | 2.2mOhm @ 100A, 10V | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | 1250W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 76A (Tc) | 4.5V @ 250µA | 150 V | 10V | 22mOhm @ 38A, 10V | 97 nC @ 10 V | ±20V | 5800 pF @ 25 V | 350W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-220-3 | TO-220-3 | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 76A (Tc) | 4.5V @ 250µA | 150 V | 10V | 20mOhm @ 38A, 10V | 97 nC @ 10 V | ±20V | 5800 pF @ 25 V | 350W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | TO-247-3 | TO-247AD (IXFH) | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 400A (Tc) | 4V @ 250µA | 75 V | 10V | 2.3mOhm @ 100A, 10V | 420 nC @ 10 V | ±20V | 24000 pF @ 25 V | 1000W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | SOT-227-4, miniBLOC | SOT-227B | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | HiPerFET™, TrenchT2™ | - | 260A (Tc) | 5V @ 8mA | 170 V | 10V | 5.2mOhm @ 60A, 10V | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | 1070W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速报价吗?
告诉我们您在找什么？