HiPerFET™, Polar3™ 系列, 单 FET,MOSFET

结果:
79
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
结果79
搜索条目:
HiPerFET™, Polar3™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFP5N50P3
MOSFET N-CH 500V 5A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
5A (Tc)
5V @ 1mA
500 V
10V
1.65Ohm @ 2.5A, 10V
6.9 nC @ 10 V
±30V
370 pF @ 25 V
114W (Tc)
-
IXFP8N50P3
MOSFET N-CH 500V 8A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
8A (Tc)
5V @ 1.5mA
500 V
10V
800mOhm @ 4A, 10V
13 nC @ 10 V
±30V
705 pF @ 25 V
180W (Tc)
-
IXFY5N50P3
MOSFET N-CH 500V 5A TO252
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
5A (Tc)
5V @ 1mA
500 V
10V
1.65Ohm @ 2.5A, 10V
6.9 nC @ 10 V
±30V
370 pF @ 25 V
114W (Tc)
-
IXFA5N50P3
MOSFET N-CH 500V 5A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
5A (Tc)
5V @ 1mA
500 V
10V
1.65Ohm @ 2.5A, 10V
6.9 nC @ 10 V
±30V
370 pF @ 25 V
114W (Tc)
-
IXFA7N60P3
MOSFET N-CH 600V 7A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
7A (Tc)
5V @ 1mA
600 V
10V
1.15Ohm @ 3.5A, 10V
13.3 nC @ 10 V
±30V
705 pF @ 25 V
180W (Tc)
-
IXFA8N50P3
MOSFET N-CH 500V 8A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
8A (Tc)
5V @ 1.5mA
500 V
10V
800mOhm @ 4A, 10V
13 nC @ 10 V
±30V
705 pF @ 25 V
180W (Tc)
-
IXFH80N30P3
MOSFET N-CH 300V 80A TO-247
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数量
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
HiPerFET™, Polar3™
-
-
-
-
-
-
-
-
-
-
-
IXFT80N30P3
MOSFET N-CH 300V 80A TO-268
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
HiPerFET™, Polar3™
-
-
-
-
-
-
-
-
-
-
-
IXFH16N60P3
MOSFET N-CH 600V 16A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
16A (Tc)
5V @ 1.5mA
600 V
10V
470mOhm @ 500mA, 10V
36 nC @ 10 V
±30V
1830 pF @ 25 V
347W (Tc)
-
IXFP7N60P3
MOSFET N-CH 600V 7A TO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
7A (Tc)
5V @ 1mA
600 V
10V
1.15Ohm @ 500mA, 10V
13.3 nC @ 10 V
±30V
705 pF @ 25 V
180W (Tc)
-
IXFA4N60P3
MOSFET N-CH 600V 4A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
4A (Tc)
5V @ 250µA
600 V
10V
2.2Ohm @ 2A, 10V
6.9 nC @ 10 V
±30V
365 pF @ 25 V
114W (Tc)
-
IXFA14N60P3
MOSFET N-CH 600V 14A TO263
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
14A (Tc)
5V @ 1mA
600 V
10V
540mOhm @ 7A, 10V
25 nC @ 10 V
±30V
1480 pF @ 25 V
327W (Tc)
-
IXFH14N60P3
MOSFET N-CH 600V 14A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
14A (Tc)
5V @ 1mA
600 V
10V
540mOhm @ 7A, 10V
25 nC @ 10 V
±30V
1480 pF @ 25 V
327W (Tc)
-
IXFP14N60P3
MOSFET N-CH 600V 14A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
14A (Tc)
5V @ 1mA
600 V
10V
540mOhm @ 7A, 10V
25 nC @ 10 V
±30V
1480 pF @ 25 V
327W (Tc)
-
IXFP4N60P3
MOSFET N-CH 600V 4A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
4A (Tc)
5V @ 250µA
600 V
10V
2.2Ohm @ 2A, 10V
6.9 nC @ 10 V
±30V
365 pF @ 25 V
114W (Tc)
-
IXFY4N60P3
MOSFET N-CH 600V 4A TO252
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
4A (Tc)
5V @ 250µA
600 V
10V
2.2Ohm @ 2A, 10V
6.9 nC @ 10 V
±30V
365 pF @ 25 V
114W (Tc)
-
IXFH28N60P3
MOSFET N-CH 600V 28A TO247AD
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4,330 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
28A (Tc)
5V @ 2.5mA
600 V
10V
260mOhm @ 14A, 10V
50 nC @ 10 V
±30V
3560 pF @ 25 V
695W (Tc)
-
IXFK80N60P3
MOSFET N-CH 600V 80A TO264AA
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
TO-264AA (IXFK)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
80A (Tc)
5V @ 8mA
600 V
10V
70mOhm @ 500mA, 10V
190 nC @ 10 V
±30V
13100 pF @ 25 V
1300W (Tc)
-
IXFH20N50P3
MOSFET N-CH 500V 20A TO247AD
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
20A (Tc)
5V @ 1.5mA
500 V
10V
300mOhm @ 10A, 10V
36 nC @ 10 V
±30V
1800 pF @ 25 V
380W (Tc)
-
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
HiPerFET™, Polar3™
-
16A (Tc)
5V @ 2.5mA
500 V
10V
360mOhm @ 8A, 10V
29 nC @ 10 V
±30V
1515 pF @ 25 V
330W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。