- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
HEXFET® Series, 单 FET，MOSFET
结果:
3,068
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Mounting Type
Qualification
Grade
Configuration
Technology
Power - Max
结果：3,068
搜索条目:
HEXFET®
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Drain to Source Voltage (Vdss) | Technology | Series | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Supplier Device Package | Package / Case |
|---|
 | 1+ $14.4000 5+ $13.6000 10+ $12.8000 更多的价格 | 46,071 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 25 V | MOSFET (Metal Oxide) | HEXFET® | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39 nC @ 4.5 V | ±16V | 4160 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | DIRECTFET™ MX | DirectFET™ Isometric MX | ||
 | 1+ $9.0000 5+ $8.5000 10+ $8.0000 更多的价格 | 4,992 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 30V | MOSFET (Metal Oxide) | HEXFET® | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | Logic Level Gate | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | ||||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | P-Channel | 20 V | MOSFET (Metal Oxide) | HEXFET® | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Ta) | 8-SO | 8-SOIC (0.154", 3.90mm Width) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | HEXFET® | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 150µA | 77 nC @ 4.5 V | ±20V | 6140 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | DIRECTFET™ MT | DirectFET™ Isometric MT | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 55 V | MOSFET (Metal Oxide) | HEXFET® | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | ±16V | 2900 pF @ 25 V | - | 130W (Tc) | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 55 V | MOSFET (Metal Oxide) | HEXFET® | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 3V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | TO-252AA (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 40 V | MOSFET (Metal Oxide) | HEXFET® | 56A (Tc) | - | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | 55 V | MOSFET (Metal Oxide) | HEXFET® | 30A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2430 pF @ 25 V | - | 110W (Tc) | TO-252AA (DPAK) | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | P-Channel | 150 V | MOSFET (Metal Oxide) | HEXFET® | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 20 V | MOSFET (Metal Oxide) | HEXFET® | 4.2A (Ta) | - | 85mOhm @ 4A, 4.5V | 700mV @ 250µA | 7.5 nC @ 4.5 V | - | 310 pF @ 15 V | - | - | 8-SO | 8-SOIC (0.154", 3.90mm Width) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | 60 V | MOSFET (Metal Oxide) | HEXFET® | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | N-Channel | 75 V | MOSFET (Metal Oxide) | HEXFET® | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | TO-247AC | TO-247-3 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | HEXFET® | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | ±20V | 4110 pF @ 15 V | - | 2.1W (Ta), 75W (Tc) | DIRECTFET™ MX | DirectFET™ Isometric MX | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 25 V | MOSFET (Metal Oxide) | HEXFET® | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38 nC @ 4.5 V | ±16V | 3480 pF @ 13 V | - | 2.1W (Ta), 69W (Tc) | DIRECTFET™ MX | DirectFET™ Isometric MX | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 25 V | MOSFET (Metal Oxide) | HEXFET® | 40A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 55 nC @ 10 V | ±20V | 3520 pF @ 13 V | - | 3.6W (Ta), 96W (Tc) | PQFN (5x6) | 8-PowerTDFN | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | 20 V | MOSFET (Metal Oxide) | HEXFET® | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 1.8W (Ta) | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | HEXFET® | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 38 nC @ 4.5 V | ±20V | 4110 pF @ 15 V | Schottky Diode (Body) | 2.1W (Ta), 75W (Tc) | DirectFET™ Isometric MX | DirectFET™ Isometric MX | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 30 V | MOSFET (Metal Oxide) | HEXFET® | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 42 nC @ 4.5 V | ±20V | 4404 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | DIRECTFET™ MX | DirectFET™ Isometric MX | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 25 V | MOSFET (Metal Oxide) | HEXFET® | 29A (Ta), 168A (Tc) | 4.5V, 10V | 1.6mOhm @ 29A, 10V | 2.1V @ 100µA | 38 nC @ 4.5 V | ±16V | 3480 pF @ 13 V | - | 2.1W (Ta), 69W (Tc) | DIRECTFET™ MX | DirectFET™ Isometric MX | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 25 V | MOSFET (Metal Oxide) | HEXFET® | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11 nC @ 4.5 V | ±16V | 1038 pF @ 13 V | - | 2.1W (Ta), 20W (Tc) | DirectFET™ Isometric S1 | DirectFET™ Isometric S1 |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速报价吗?
告诉我们您在找什么？