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FETKY™ Series, 单 FET，MOSFET
结果:
82
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Mounting Type
Grade
Qualification
Technology
结果：82
搜索条目:
FETKY™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Grade | Technology | Series | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Qualification |
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 | 1+ ¥2.7000 5+ ¥2.5500 10+ ¥2.4000 更多的价格 | 4,600 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | P-Channel | 40 V | - | MOSFET (Metal Oxide) | FETKY™ | 3.4A (Ta) | 3V @ 250µA | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
| 1+ ¥19.8000 5+ ¥18.7000 10+ ¥17.6000 更多的价格 | 3,544 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.2A (Ta) | 700mV @ 250µA (Min) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 7.8 nC @ 4.5 V | ±12V | 260 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
| 1+ ¥3.2400 5+ ¥3.0600 10+ ¥2.8800 更多的价格 | 1,449 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | P-Channel | 40 V | - | MOSFET (Metal Oxide) | FETKY™ | 3.4A (Ta) | 3V @ 250µA | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 37 nC @ 10 V | ±20V | 1110 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 6A (Ta) | 2.5V @ 250µA | 4.5V, 10V | 32mOhm @ 6A, 10V | 30 nC @ 10 V | ±20V | 950 pF @ 24 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 64A (Tc) | 1V @ 250µA | 4.5V, 10V | 14mOhm @ 34A, 10V | 43 nC @ 4.5 V | ±16V | 1900 pF @ 25 V | - | 3.1W (Ta), 89W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (3x3) | N-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.8A (Ta) | 2V @ 250µA | 2.5V, 4.5V | 90mOhm @ 3.4A, 4.5V | 10 nC @ 4.5 V | ±12V | 275 pF @ 10 V | - | 1.14W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.34A (Ta) | 2.5V @ 250µA | 4.5V, 10V | 85mOhm @ 3.05A, 10V | 25 nC @ 10 V | ±20V | 750 pF @ 16 V | Schottky Diode (Isolated) | 730mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.34A (Ta) | 2.5V @ 250µA | 4.5V, 10V | 85mOhm @ 3.05A, 10V | 25 nC @ 10 V | ±20V | 750 pF @ 16 V | Schottky Diode (Isolated) | 730mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 8.3A (Ta) | 3V @ 250µA | 4.5V | 25mOhm @ 7A, 4.5V | 14 nC @ 4.5 V | ±20V | - | Schottky Diode (Isolated) | 2.5W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 8.3A (Ta) | 1V @ 250µA | 4.5V | 25mOhm @ 7A, 4.5V | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 8.3A (Ta) | 1V @ 250µA | 4.5V | 25mOhm @ 7A, 4.5V | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.4A (Ta) | 1.5V @ 250µA | 2.5V, 4.5V | 90mOhm @ 3.3A, 4.5V | 18 nC @ 4.5 V | ±10V | 750 pF @ 16 V | Schottky Diode (Isolated) | 780mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 2.7A (Ta) | 1V @ 250µA | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 12 nC @ 10 V | ±20V | 210 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | P-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 2A (Ta) | 1V @ 250µA | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | P-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 2A (Ta) | 1V @ 250µA | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | - | TO-220-3 | TO-220AB | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 54A (Tc) | 1V @ 250µA | 4.5V, 10V | 14mOhm @ 32A, 10V | 44 nC @ 4.5 V | ±16V | 2300 pF @ 25 V | - | 2W (Ta), 70W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 8.3A (Ta) | 1V @ 250µA | 4.5V | 25mOhm @ 7A, 4.5V | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 4.3A (Ta) | 700mV @ 250µA (Min) | 2.7V, 4.5V | 90mOhm @ 2.2A, 4.5V | 22 nC @ 4.5 V | ±12V | 610 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SO | N-Channel | 30 V | - | MOSFET (Metal Oxide) | FETKY™ | 6.5A (Ta) | 1V @ 250µA | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Micro8™ | P-Channel | 20 V | - | MOSFET (Metal Oxide) | FETKY™ | 1.7A (Ta) | 700mV @ 250µA (Min) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 8.2 nC @ 4.5 V | ±12V | 240 pF @ 15 V | Schottky Diode (Isolated) | 1.25W (Ta) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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