Automotive, AEC-Q101, OptiMOS™ Series, 单 FET,MOSFET

结果:
11
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
FET Type
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
Mounting Type
Technology
结果11
搜索条目:
Automotive, AEC-Q101, OptiMOS™
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图片产品详情单价可用性ECAD 模型Mounting TypePackage / CaseFET TypeDrain to Source Voltage (Vdss)Operating TemperatureSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
IPP120N06S403AKSA2
MOSFET N-CH 60V 120A TO220-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
60 V
-55°C ~ 175°C (TJ)
PG-TO220-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
120A (Tc)
10V
3.2mOhm @ 100A, 10V
4V @ 120µA
160 nC @ 10 V
±20V
13150 pF @ 25 V
167W (Tc)
IPI120N06S403AKSA2
MOSFET N-CH 60V 120A TO262-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
60 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
120A (Tc)
10V
3.2mOhm @ 100A, 10V
4V @ 120µA
160 nC @ 10 V
±20V
13150 pF @ 25 V
167W (Tc)
IPI120N06S4H1AKSA2
MOSFET N-CH 60V 120A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
60 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
120A (Tc)
10V
2.4mOhm @ 100A, 10V
4V @ 200µA
270 nC @ 10 V
±20V
21900 pF @ 25 V
250W (Tc)
IPI80N06S4L05AKSA2
MOSFET N-CH 60V 80A TO262-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
60 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
80A (Tc)
4.5V, 10V
8.5mOhm @ 40A, 4.5V
2.2V @ 60µA
110 nC @ 10 V
±16V
8180 pF @ 25 V
107W (Tc)
IPP70P04P409AKSA1
MOSFET P-CH 40V 72A TO220-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO220-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
72A (Tc)
10V
9.4mOhm @ 70A, 10V
4V @ 120µA
70 nC @ 10 V
±20V
4810 pF @ 25 V
75W (Tc)
IPI120P04P404AKSA1
MOSFET P-CH 40V 120A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
120A (Tc)
10V
3.8mOhm @ 100A, 10V
4V @ 340µA
205 nC @ 10 V
±20V
14790 pF @ 25 V
136W (Tc)
IPI70P04P409AKSA1
MOSFET N-CH 40V 72A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
72A (Tc)
10V
9.4mOhm @ 70A, 10V
4V @ 120µA
70 nC @ 10 V
±20V
4810 pF @ 25 V
75W (Tc)
IPI80P04P407AKSA1
MOSFET P-CH 40V 80A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
80A (Tc)
10V
7.7mOhm @ 80A, 10V
4V @ 150µA
89 nC @ 10 V
±20V
6085 pF @ 25 V
88W (Tc)
IPI80P04P4L06AKSA1
MOSFET P-CH 40V 80A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
80A (Tc)
4.5V, 10V
6.7mOhm @ 80A, 10V
2.2V @ 150µA
104 nC @ 10 V
+5V, -16V
6580 pF @ 25 V
88W (Tc)
IPI80P04P4L08AKSA1
MOSFET P-CH 40V 80A TO262-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO262-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
80A (Tc)
4.5V, 10V
8.2mOhm @ 80A, 10V
2.2V @ 120µA
92 nC @ 10 V
+5V, -16V
5430 pF @ 25 V
75W (Tc)
IPP80P04P407AKSA1
MOSFET P-CH 40V 80A TO220-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
P-Channel
40 V
-55°C ~ 175°C (TJ)
PG-TO220-3-1
MOSFET (Metal Oxide)
Automotive, AEC-Q101, OptiMOS™
-
80A (Tc)
10V
7.7mOhm @ 80A, 10V
4V @ 150µA
89 nC @ 10 V
±20V
6085 pF @ 25 V
88W (Tc)

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。