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- 单 FET，MOSFET
E Series, 单 FET，MOSFET
结果:
201
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
Technology
FET Feature
FET Type
结果：201
搜索条目:
E
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Series | Package / Case | Grade | Supplier Device Package | Technology | FET Feature | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥6.3000 5+ ¥5.9500 10+ ¥5.6000 更多的价格 | 16,844 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 2.8A (Tc) | 10V | 2.75Ohm @ 1A, 10V | 19.6 nC @ 10 V | ±30V | 315 pF @ 100 V | 62.5W (Tc) | - | ||
 | 1+ ¥39.6000 5+ ¥37.4000 10+ ¥35.2000 更多的价格 | 14,327 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | 278W (Tc) | - | ||
| 1+ ¥144.0000 5+ ¥136.0000 10+ ¥128.0000 更多的价格 | 13,199 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | 78W (Tc) | - | ||
 | 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 9,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | - | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | 227W (Tc) | - | ||
 | 1+ ¥35.1000 5+ ¥33.1500 10+ ¥31.2000 更多的价格 | 7,265 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | TO-220AB | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 15A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 122 nC @ 10 V | ±30V | 2408 pF @ 100 V | 208W (Tc) | - | ||
 | 1+ ¥12.2040 5+ ¥11.5260 10+ ¥10.8480 更多的价格 | 5,615 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | PowerPAK® SO-8 | - | PowerPAK® SO-8 | MOSFET (Metal Oxide) | - | 4.5V @ 250µA | 600 V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 50 nC @ 10 V | ±30V | 784 pF @ 100 V | 89W (Tc) | - | ||
 | 1+ ¥50.4000 5+ ¥47.6000 10+ ¥44.8000 更多的价格 | 5,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 Full Pack | - | - | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | 37W (Tc) | - | ||
 | 1+ ¥356.4000 5+ ¥336.6000 10+ ¥316.8000 更多的价格 | 2,965 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | 8-PowerTDFN | - | PowerPAK® 8 x 8 | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 29A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 135 nC @ 10 V | ±30V | 2609 pF @ 100 V | 202W (Tc) | - | ||
| 1+ ¥90.0000 5+ ¥85.0000 10+ ¥80.0000 更多的价格 | 2,700 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | 227W (Tc) | - | ||
| 1+ ¥180.0000 5+ ¥170.0000 10+ ¥160.0000 更多的价格 | 2,400 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D2Pak) | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | 147W (Tc) | - | ||
 | 1+ ¥23.4000 5+ ¥22.1000 10+ ¥20.8000 更多的价格 | 1,179 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-247-3 | - | TO-247AC | MOSFET (Metal Oxide) | - | 5V @ 250µA | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | 156W (Tc) | - | ||
| 1+ ¥108.0000 5+ ¥102.0000 10+ ¥96.0000 更多的价格 | 1,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | TO-220AB | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | 147W (Tc) | - | ||
 | 1+ ¥18.9720 5+ ¥17.9180 10+ ¥16.8640 更多的价格 | 978 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | TO-220AB | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | 147W (Tc) | - | ||
| 1+ ¥52.2000 5+ ¥49.3000 10+ ¥46.4000 更多的价格 | 950 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | - | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | 250W (Tc) | - | ||
| 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-247-3 | - | TO-247AC | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 182 nC @ 10 V | ±30V | 3600 pF @ 100 V | 313W (Tc) | - | ||
| 1+ ¥27.0000 5+ ¥25.5000 10+ ¥24.0000 更多的价格 | 50 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 | - | TO-220AB | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | 69W (Tc) | - | ||
| 1+ ¥22.5000 5+ ¥21.2500 10+ ¥20.0000 更多的价格 | 49 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-247-3 | - | TO-247AC | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | 78W (Tc) | - | ||
 | 1+ ¥185.4000 5+ ¥175.1000 10+ ¥164.8000 更多的价格 | 40 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 175°C (TJ) | N-Channel | E | TO-247-4 | Automotive | TO-247-4L | SiC (Silicon Carbide Junction Transistor) | - | 3.6V @ 4.84mA | 650 V | 46A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 64 nC @ 15 V | +19V, -8V | 1593 pF @ 400 V | 150W (Tc) | AEC-Q101 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | E | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | MOSFET (Metal Oxide) | - | 4V @ 250µA | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | 62.5W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | E | TO-220-3 Full Pack | - | TO-220 Full Pack | MOSFET (Metal Oxide) | - | 4V @ 250µA | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | 34W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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