PowerMESH™ Series, 单 FET,MOSFET

结果:
34
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果34
搜索条目:
PowerMESH™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypeOperating TemperaturePackage / CaseSupplier Device PackageGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STFW3N150
MOSFET N-CH 1500V 2.5A ISOWATT
1+
¥8.9640
5+
¥8.4660
10+
¥7.9680
数量
266,900 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
63W (Tc)
-
STW4N150
MOSFET N-CH 1500V 4A TO247-3
1+
¥21.6000
5+
¥20.4000
10+
¥19.2000
数量
118,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
160W (Tc)
-
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
1+
¥25.2000
5+
¥23.8000
10+
¥22.4000
数量
37,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-263-3, D2PAK (2 Leads + Tab), Variant
H²PAK
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STP5NK80Z
MOSFET N-CH 800V 4.3A TO220AB
1+
¥27.0000
5+
¥25.5000
10+
¥24.0000
数量
30,903 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.3A (Tc)
4.5V @ 100µA
800 V
10V
2.4Ohm @ 2.15A, 10V
45.5 nC @ 10 V
±30V
910 pF @ 25 V
110W (Tc)
-
STP3N150
MOSFET N-CH 1500V 2.5A TO220AB
1+
¥21.6000
5+
¥20.4000
10+
¥19.2000
数量
30,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STW3N150
MOSFET N-CH 1500V 2.5A TO247-3
1+
¥12.6000
5+
¥11.9000
10+
¥11.2000
数量
30,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.5A (Tc)
5V @ 250µA
1500 V
10V
9Ohm @ 1.3A, 10V
29.3 nC @ 10 V
±30V
939 pF @ 25 V
140W (Tc)
-
STFW3N170
MOSFET N-CH 1700V 2.6A ISOWATT
1+
¥18.9720
5+
¥17.9180
10+
¥16.8640
数量
11,400 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.6A (Tc)
5V @ 250µA
1700 V
10V
13Ohm @ 1.3A, 10V
44 nC @ 10 V
±30V
1100 pF @ 100 V
63W (Tc)
-
STP4N150
MOSFET N-CH 1500V 4A TO220AB
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
5,795 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
160W (Tc)
-
STW9N150
MOSFET N-CH 1500V 8A TO247-3
1+
¥378.0000
5+
¥357.0000
10+
¥336.0000
数量
4,650 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
8A (Tc)
5V @ 250µA
1500 V
10V
2.5Ohm @ 4A, 10V
89.3 nC @ 10 V
±30V
3255 pF @ 25 V
320W (Tc)
-
STP5NK80ZFP
MOSFET N-CH 800V 4.3A TO220FP
1+
¥18.0000
5+
¥17.0000
10+
¥16.0000
数量
2,953 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.3A (Tc)
4.5V @ 100µA
800 V
10V
2.4Ohm @ 2.15A, 10V
45.5 nC @ 10 V
±30V
910 pF @ 25 V
30W (Tc)
-
STFW4N150
MOSFET N-CH 1500V 4A ISOWATT
1+
¥48.6000
5+
¥45.9000
10+
¥43.2000
数量
1,555 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-3P-3 Full Pack
TO-3PF
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
1500 V
10V
7Ohm @ 2A, 10V
50 nC @ 10 V
±30V
1300 pF @ 25 V
63W (Tc)
-
STW3N170
MOSFET N-CH 1700V 2.6A TO247-3
1+
¥360.0000
5+
¥340.0000
10+
¥320.0000
数量
798 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
2.6A (Tc)
5V @ 250µA
1700 V
10V
13Ohm @ 1.3A, 10V
44 nC @ 10 V
±30V
1100 pF @ 100 V
160mW
-
STW11NB80
MOSFET N-CH 800V 11A TO247-3
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
数量
103 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
PowerMESH™
-
11A (Tc)
5V @ 250µA
800 V
10V
800mOhm @ 5.5A, 10V
70 nC @ 10 V
±30V
2900 pF @ 25 V
190W (Tc)
-
STY34NB50
MOSFET N-CH 500V 34A MAX247
1+
¥36.0000
5+
¥34.0000
10+
¥32.0000
数量
2 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
MAX247™
-
MOSFET (Metal Oxide)
PowerMESH™
-
34A (Tc)
5V @ 250µA
500 V
10V
130mOhm @ 17A, 10V
223 nC @ 10 V
±30V
9100 pF @ 25 V
450W (Tc)
-
STP3NB100
MOSFET N-CH 1000V 3A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
3A (Tc)
4V @ 250µA
1000 V
10V
6Ohm @ 1.5A, 10V
30 nC @ 10 V
±30V
700 pF @ 25 V
100W (Tc)
-
STP5NB40
MOSFET N-CH 400V 4.7A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.7A (Tc)
5V @ 250µA
400 V
10V
1.8Ohm @ 2.3A, 10V
20 nC @ 10 V
±30V
405 pF @ 25 V
80W (Tc)
-
STP4NB50
MOSFET N-CH 500V 3.8A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
3.8A (Tc)
4V @ 250µA
500 V
10V
2.8Ohm @ 1.9A, 10V
21 nC @ 10 V
±30V
400 pF @ 25 V
80W (Tc)
-
IRF830
MOSFET N-CH 500V 4.5A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4.5A (Tc)
4V @ 250µA
500 V
10V
1.5Ohm @ 2.7A, 10V
30 nC @ 10 V
±20V
610 pF @ 25 V
100W (Tc)
-
STP7NB60
MOSFET N-CH 600V 7.2A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
7.2A (Tc)
5V @ 250µA
600 V
10V
1.2Ohm @ 3.6A, 10V
45 nC @ 10 V
±30V
1625 pF @ 25 V
125W (Tc)
-
STP4NB80
MOSFET N-CH 800V 4A TO220AB
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
PowerMESH™
-
4A (Tc)
5V @ 250µA
800 V
10V
3.3Ohm @ 2A, 10V
29 nC @ 10 V
±30V
920 pF @ 25 V
100W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。