POWER MOS 7® 系列, 单 FET,MOSFET

结果:
156
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
结果156
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POWER MOS 7®
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradePackage / CaseSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT12067B2LLG
MOSFET N-CH 1200V 18A T-MAX
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
TO-247-3 Variant
T-MAX™ [B2]
MOSFET (Metal Oxide)
POWER MOS 7®
-
18A (Tc)
5V @ 2.5mA
10V
670mOhm @ 9A, 10V
150 nC @ 10 V
±30V
4420 pF @ 25 V
565W (Tc)
-
APT12067JLL
MOSFET N-CH 1200V 17A SOT227
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
SOT-227-4, miniBLOC
SOT-227
MOSFET (Metal Oxide)
POWER MOS 7®
-
17A (Tc)
5V @ 2.5mA
10V
570mOhm @ 10A, 10V
290 nC @ 10 V
±30V
6200 pF @ 25 V
460W (Tc)
-
APT12057JLL
MOSFET N-CH 1200V 19A SOT227
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
SOT-227-4, miniBLOC
SOT-227
MOSFET (Metal Oxide)
POWER MOS 7®
-
19A (Tc)
5V @ 2.5mA
10V
570mOhm @ 10A, 10V
290 nC @ 10 V
±30V
6200 pF @ 25 V
520W (Tc)
-
APT5014SLLG/TR
MOSFET N-CH 500V 35A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
500 V
-
TO-247-3
TO-247
MOSFET (Metal Oxide)
POWER MOS 7®
-
35A (Tc)
5V @ 1mA
10V
140mOhm @ 17.5A, 10V
72 nC @ 10 V
±30V
3261 pF @ 25 V
403W (Tc)
-
APT10090BLLG
MOSFET N-CH 1000V 12A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1000 V
-
TO-247-3
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 7®
-
12A (Tc)
5V @ 1mA
10V
950mOhm @ 6A, 10V
71 nC @ 10 V
±30V
1969 pF @ 25 V
298W (Tc)
-
APT1204R7BFLLG
MOSFET N-CH 1200V 3.5A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
TO-247-3
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 7®
-
3.5A (Tc)
5V @ 1mA
10V
4.7Ohm @ 1.75A, 10V
31 nC @ 10 V
±30V
715 pF @ 25 V
135W (Tc)
-
APT10035B2LLG
MOSFET N-CH 1000V 28A T-MAX
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1000 V
-
TO-247-3 Variant
T-MAX™ [B2]
MOSFET (Metal Oxide)
POWER MOS 7®
-
28A (Tc)
5V @ 2.5mA
10V
350mOhm @ 14A, 10V
186 nC @ 10 V
±30V
5185 pF @ 25 V
690W (Tc)
-
APT1003RKLLG
MOSFET N-CH 1000V 4A TO220
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1000 V
-
TO-220-3
TO-220 [K]
MOSFET (Metal Oxide)
POWER MOS 7®
-
4A (Tc)
5V @ 1mA
10V
3Ohm @ 2A, 10V
34 nC @ 10 V
±30V
694 pF @ 25 V
139W (Tc)
-
APT1204R7KFLLG
MOSFET N-CH 1200V 3.5A TO220
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数量
1 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
1200 V
-
TO-220-3
TO-220 [K]
MOSFET (Metal Oxide)
POWER MOS 7®
-
3.5A (Tc)
5V @ 1mA
10V
4.7Ohm @ 1.75A, 10V
31 nC @ 10 V
±30V
715 pF @ 25 V
135W (Tc)
-
APT55M65JFLL
MOSFET N-CH 550V 63A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
550 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
63A (Tc)
5V @ 5mA
10V
65mOhm @ 31.5A, 10V
205 nC @ 10 V
±30V
9165 pF @ 25 V
595W (Tc)
-
APT6017B2LLG
MOSFET N-CH 600V 35A T-MAX
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
600 V
-
TO-247-3 Variant
T-MAX™ [B2]
MOSFET (Metal Oxide)
POWER MOS 7®
-
35A (Tc)
5V @ 2.5mA
10V
170mOhm @ 17.5A, 10V
100 nC @ 10 V
±30V
4500 pF @ 25 V
500W (Tc)
-
APT8014JLL
MOSFET N-CH 800V 42A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
800 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
42A (Tc)
5V @ 5mA
10V
140mOhm @ 21A, 10V
285 nC @ 10 V
±30V
7238 pF @ 25 V
595W (Tc)
-
APT8024LLLG
MOSFET N-CH 800V 31A TO264
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
800 V
-
TO-264-3, TO-264AA
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS 7®
-
31A (Tc)
5V @ 2.5mA
10V
240mOhm @ 15.5A, 10V
160 nC @ 10 V
±30V
4670 pF @ 25 V
565W (Tc)
-
APT8024JLL
MOSFET N-CH 800V 29A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
800 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
29A (Tc)
5V @ 2.5mA
10V
240mOhm @ 14.5A, 10V
160 nC @ 10 V
±30V
4670 pF @ 25 V
460W (Tc)
-
APT5010JFLL
MOSFET N-CH 500V 41A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
500 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
41A (Tc)
5V @ 2.5mA
-
100mOhm @ 20.5A, 10V
95 nC @ 10 V
-
4360 pF @ 25 V
-
-
APT5018BLLG
MOSFET N-CH 500V 27A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
500 V
-
TO-247-3
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS 7®
-
27A (Tc)
5V @ 1mA
10V
180mOhm @ 13.5A, 10V
58 nC @ 10 V
±30V
2596 pF @ 25 V
300W (Tc)
-
APT50M65B2LLG
MOSFET N-CH 500V 67A T-MAX
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
500 V
-
TO-247-3 Variant
T-MAX™ [B2]
MOSFET (Metal Oxide)
POWER MOS 7®
-
67A (Tc)
5V @ 2.5mA
10V
65mOhm @ 33.5A, 10V
141 nC @ 10 V
±30V
7010 pF @ 25 V
694W (Tc)
-
APT5510JFLL
MOSFET N-CH 550V 44A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
550 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
44A (Tc)
5V @ 2.5mA
10V
100mOhm @ 22A, 10V
124 nC @ 10 V
±30V
5823 pF @ 25 V
463W (Tc)
-
APT5518BFLLG
MOSFET N-CH 550V 31A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
550 V
-
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
31A (Tc)
5V @ 1mA
10V
180mOhm @ 15.5A, 10V
67 nC @ 10 V
±30V
3286 pF @ 25 V
403W (Tc)
-
APT55M50JFLL
MOSFET N-CH 550V 77A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
550 V
-
SOT-227-4, miniBLOC
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS 7®
-
77A (Tc)
5V @ 5mA
10V
50mOhm @ 38.5A, 10V
265 nC @ 10 V
±30V
12400 pF @ 25 V
694W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。