PowerTrench®, SyncFET™ Series, 单 FET,MOSFET

结果:
67
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Grade
Mounting Type
Qualification
Technology
结果67
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PowerTrench®, SyncFET™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDS6699S
MOSFET N-CH 30V 21A 8SOIC
1+
¥5.4000
5+
¥5.1000
10+
¥4.8000
数量
32,351 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
21A (Ta)
3V @ 1mA
4.5V, 10V
3.6mOhm @ 21A, 10V
91 nC @ 10 V
±20V
3610 pF @ 15 V
2.5W (Ta)
-
FDMC7672S
MOSFET N-CH 30V 14.8A/18A 8MLP
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
数量
30,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerWDFN
8-MLP (3.3x3.3)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
14.8A (Ta), 18A (Tc)
3V @ 1mA
4.5V, 10V
6mOhm @ 14.8A, 10V
42 nC @ 10 V
±20V
2520 pF @ 15 V
2.3W (Ta), 36W (Tc)
-
FDMS7660AS
MOSFET N-CH 30V 26A/42A 8PQFN
1+
¥2.7000
5+
¥2.5500
10+
¥2.4000
数量
25,681 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
26A (Ta), 42A (Tc)
3V @ 1mA
4.5V, 10V
2.4mOhm @ 25A, 10V
90 nC @ 10 V
±20V
6120 pF @ 15 V
2.5W (Ta), 83W (Tc)
-
FDMS0312S
MOSFET N-CH 30V 19A/42A 8PQFN
1+
¥1.8000
5+
¥1.7000
10+
¥1.6000
数量
22,841 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
19A (Ta), 42A (Tc)
3V @ 1mA
4.5V, 10V
4.9mOhm @ 18A, 10V
46 nC @ 10 V
±20V
2820 pF @ 15 V
2.5W (Ta), 46W (Tc)
-
FDMS0312S
POWER FIELD-EFFECT TRANSISTOR, 1
1+
¥1.8000
5+
¥1.7000
10+
¥1.6000
数量
22,841 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
19A (Ta), 42A (Tc)
3V @ 1mA
4.5V, 10V
4.9mOhm @ 18A, 10V
46 nC @ 10 V
±20V
2820 pF @ 15 V
2.5W (Ta), 46W (Tc)
-
FDS6690AS
MOSFET N-CH 30V 10A 8SOIC
1+
¥5.4000
5+
¥5.1000
10+
¥4.8000
数量
18,764 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
10A (Ta)
3V @ 1mA
4.5V, 10V
12mOhm @ 10A, 10V
23 nC @ 10 V
±20V
910 pF @ 15 V
2.5W (Ta)
-
FDMS0310AS
MOSFET N-CH 30V 19A/22A 8PQFN
1+
¥7.2000
5+
¥6.8000
10+
¥6.4000
数量
14,899 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
19A (Ta), 22A (Tc)
3V @ 1mA
4.5V, 10V
4.3mOhm @ 19A, 10V
37 nC @ 10 V
±20V
2280 pF @ 15 V
2.5W (Ta), 41W (Tc)
-
FDMC7660S
MOSFET N-CH 30V 20A/40A POWER33
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
12,250 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
Power33
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
20A (Ta), 40A (Tc)
2.5V @ 1mA
4.5V, 10V
2.2mOhm @ 20A, 10V
66 nC @ 10 V
±20V
4325 pF @ 15 V
2.3W (Ta), 41W (Tc)
-
FDMC7660S
POWER FIELD-EFFECT TRANSISTOR, 4
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
12,250 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
Power33
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
20A (Ta), 40A (Tc)
2.5V @ 1mA
4.5V, 10V
2.2mOhm @ 20A, 10V
66 nC @ 10 V
±20V
4325 pF @ 15 V
2.3W (Ta), 41W (Tc)
-
FDMS0309AS
MOSFET N-CH 30V 21A/49A 8PQFN
1+
¥432.0000
5+
¥408.0000
10+
¥384.0000
数量
12,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
21A (Ta), 49A (Tc)
3V @ 1mA
4.5V, 10V
3.5mOhm @ 21A, 10V
47 nC @ 10 V
±20V
3000 pF @ 15 V
2.5W (Ta), 50W (Tc)
-
FDMS0308AS
MOSFET N-CH 30V 24A/49A 8PQFN
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
6,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
24A (Ta), 49A (Tc)
3V @ 1mA
4.5V, 10V
2.8mOhm @ 24A, 10V
47 nC @ 10 V
±20V
3000 pF @ 15 V
2.5W (Ta), 50W (Tc)
-
FDS6670AS
MOSFET N-CH 30V 13.5A 8SOIC
1+
¥7.2000
5+
¥6.8000
10+
¥6.4000
数量
5,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
13.5A (Ta)
3V @ 1mA
4.5V, 10V
9mOhm @ 13.5A, 10V
38 nC @ 10 V
±20V
1540 pF @ 15 V
2.5W (Ta)
-
FDMS8023S
POWER FIELD-EFFECT TRANSISTOR, 2
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
4,222 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
26A (Ta), 49A (Tc)
3V @ 1mA
4.5V, 10V
2.4mOhm @ 26A, 10V
57 nC @ 10 V
±20V
3550 pF @ 15 V
2.5W (Ta), 59W (Tc)
-
FDMS0306AS
MOSFET N-CH 30V 26A/49A 8PQFN
1+
¥1.5300
5+
¥1.4450
10+
¥1.3600
数量
3,363 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
26A (Ta), 49A (Tc)
3V @ 1mA
4.5V, 10V
2.4mOhm @ 26A, 10V
57 nC @ 10 V
±20V
3550 pF @ 15 V
2.5W (Ta), 59W (Tc)
-
FDMS0300S
MOSFET N-CH 30V 31A/49A 8PQFN
1+
¥18.9000
5+
¥17.8500
10+
¥16.8000
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
31A (Ta), 49A (Tc)
3V @ 1mA
4.5V, 10V
1.8mOhm @ 30A, 10V
133 nC @ 10 V
±20V
8705 pF @ 15 V
2.5W (Ta), 96W (Tc)
-
FDD6680AS
MOSFET N-CH 30V 55A TO252
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
55A (Ta)
3V @ 1mA
4.5V, 10V
10.5mOhm @ 12.5A, 10V
29 nC @ 10 V
±20V
1200 pF @ 15 V
60W (Ta)
-
FDMS8570S
MOSFET N-CH 25V 24A/60A 8PQFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
25 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
24A (Ta), 60A (Tc)
2.2V @ 1mA
4.5V, 10V
2.8mOhm @ 24A, 10V
425 nC @ 10 V
±12V
2825 pF @ 13 V
2.5W (Ta), 48W (Tc)
-
FDMS8570S
28A, 25V, 0.0028OHM, N-CHANNEL,
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
8-PQFN (5x6)
N-Channel
25 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
24A (Ta), 60A (Tc)
2.2V @ 1mA
4.5V, 10V
2.8mOhm @ 24A, 10V
425 nC @ 10 V
±12V
2825 pF @ 13 V
2.5W (Ta), 48W (Tc)
-
FDMS8570SDC
28A, 25V, 0.0028OHM, N-CHANNEL,
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
Dual Cool™56
N-Channel
25 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
Schottky Diode (Body)
28A (Ta), 60A (Tc)
2.2V @ 1mA
4.5V, 10V
2.8mOhm @ 28A, 10V
42 nC @ 10 V
±12V
2825 pF @ 13 V
3.3W (Ta), 59W (Tc)
-
FDS6676AS
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
PowerTrench®, SyncFET™
MOSFET (Metal Oxide)
-
14.5A (Ta)
3V @ 1mA
4.5V, 10V
6mOhm @ 14.5A, 10V
63 nC @ 10 V
±20V
2510 pF @ 15 V
2.5W (Ta)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。