CoolGaN™ Series, 单 FET,MOSFET

结果:
25
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Vgs(th) (Max) @ Id
Operating Temperature
Package / Case
Vgs (Max)
FET Type
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
结果25
搜索条目:
CoolGaN™
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeGradeSeriesFET FeatureRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IGT60R190D1SATMA1
GANFET N-CH 600V 12.5A 8HSOF
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
12.5A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
55.5W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGLD60R070D1AUMA3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
114W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGLR60R190D1XUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
12.8A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
55.5W (Tc)
PG-TSON-8-6
8-PowerTDFN
-
IGLD60R190D1AUMA3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
62.5W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGLR60R190D1E8238XUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
12.8A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
55.5W (Tc)
PG-TSON-8-6
8-PowerTDFN
-
IGLR60R260D1E8238XUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10.4A (Tc)
-
1.6V @ 690µA
-10V
110 pF @ 400 V
52W (Tc)
PG-TSON-8-7
8-PowerTDFN
-
IGLD60R190D1SAUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
62.5W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGLR60R340D1XUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
8.2A (Tc)
-
1.6V @ 530µA
-10V
87.7 pF @ 400 V
41.6W (Tc)
PG-TSON-8-7
8-PowerTDFN
-
IGT60R070D1ATMA4
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGO60R070D1AUMA2
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT40R070D1E8220ATMA1
MOSFET N-CH 400V 31A HSOF-8-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
0°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
400 V
31A (Tc)
-
1.6V @ 2.6mA
±10V
382 pF @ 320 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOF
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGOT60R070D1AUMA1
GANFET N-CH 600V 31A 20DSO
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGO60R070D1AUMA1
GANFET N-CH 600V 31A 20DSO
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGLD60R070D1AUMA1
GANFET N-CH 600V 15A LSON-8
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
114W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGO60R070D1E8220AUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT60R070D1E8220ATMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGOT60R070D1E8220AUMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT40R070D1ATMA1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
400 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
382 pF @ 320 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGLD60R190D1AUMA1
MOSFET N-CH 600V 10A LSON-8
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
62.5W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。