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CoolMOS™ Series, 单 FET，MOSFET
结果:
732
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
结果：732
搜索条目:
CoolMOS™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Package / Case | Grade | Supplier Device Package | Series | Technology | FET Feature | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ ¥4.5000 5+ ¥4.2500 10+ ¥4.0000 更多的价格 | 176,736 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | PG-TO252-3 | CoolMOS™ | MOSFET (Metal Oxide) | - | 4.5A (Tc) | 600 V | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25 nC @ 10 V | ±20V | 490 pF @ 25 V | 50W (Tc) | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 10A (Tc) | 500 V | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | 89W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Stub Leads, IPak | PG-TO251-3-11 | CoolMOS™ | MOSFET (Metal Oxide) | - | 7.1A (Tc) | 500 V | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | 66W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | CoolMOS™ | MOSFET (Metal Oxide) | - | 7.1A (Tc) | 500 V | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | 66W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | PG-TO220-FP | CoolMOS™ | MOSFET (Metal Oxide) | Super Junction | 10.3A (Tc) | 600 V | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 444 pF @ 100 V | 28W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 21A (Tc) | 500 V | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95 nC @ 10 V | ±20V | 2400 pF @ 25 V | 208W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 15A (Tc) | 650 V | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1600 pF @ 25 V | 156W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 11.6A (Tc) | 500 V | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | 125W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 11A (Tc) | 650 V | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | 125W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 11A (Tc) | 600 V | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | 125W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 7.6A (Tc) | 500 V | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | 83W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | PG-TO220-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 17A (Tc) | 550 V | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | 139W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-313 | CoolMOS™ | MOSFET (Metal Oxide) | - | 7.1A (Tc) | 500 V | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17 nC @ 10 V | ±20V | 680 pF @ 100 V | 66W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-220-3 | PG-TO220-3-1 | CoolMOS™ | MOSFET (Metal Oxide) | - | 5.7A (Tc) | 900 V | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34 nC @ 10 V | ±20V | 850 pF @ 100 V | 89W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -40°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | SOT-227 | CoolMOS™ | MOSFET (Metal Oxide) | Super Junction | 33A (Tc) | 900 V | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | 290W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D3PAK | CoolMOS™ | MOSFET (Metal Oxide) | - | 30A (Tc) | 600 V | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | ±20V | 2267 pF @ 25 V | 219W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -40°C ~ 150°C (TJ) | N-Channel | SOT-227-4, miniBLOC | SOT-227 | CoolMOS™ | MOSFET (Metal Oxide) | Super Junction | 33A (Tc) | 900 V | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | 290W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Chassis Mount | -40°C ~ 150°C (TJ) | N-Channel | SP1 | SP1 | CoolMOS™ | MOSFET (Metal Oxide) | Super Junction | 59A (Tc) | 900 V | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540 nC @ 10 V | ±20V | 13600 pF @ 100 V | 462W (Tc) | ||||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -40°C ~ 150°C (TJ) | N-Channel | 4-PowerTSFN | PG-VSON-4 | CoolMOS™ | MOSFET (Metal Oxide) | - | 5.8A (Tc) | 650 V | 10V | 725mOhm @ 2.1A, 10V | 4.5V @ 200µA | 20 nC @ 10 V | ±20V | 615 pF @ 100 V | 62.5W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -40°C ~ 150°C (TJ) | N-Channel | TO-220-3 Full Pack | PG-TO220 Full Pack | CoolMOS™ | MOSFET (Metal Oxide) | - | 9.9A (Tc) | 600 V | 10V | 650mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | 28W (Tc) |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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