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TrenchFET® Series, 单 FET，MOSFET
结果:
2,242
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
结果：2,242
搜索条目:
TrenchFET®
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Grade | Series | Technology | FET Feature | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 1+ $1.6146 5+ $1.5249 10+ $1.4352 更多的价格 | 1,097,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | N-Channel | 40 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | 5.6A (Tc) | 4.5V, 10V | 42mOhm @ 4.3A, 10V | 9 nC @ 10 V | ±20V | 340 pF @ 20 V | 1.25W (Ta), 2.1W (Tc) | - | ||
 | 1+ $1.8000 5+ $1.7000 10+ $1.6000 更多的价格 | 859,880 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | P-Channel | 60 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 3V @ 250µA | 4.7A (Tc) | 4.5V, 10V | 120mOhm @ 3.2A, 10V | 22 nC @ 10 V | ±20V | 600 pF @ 30 V | 2.4W (Ta), 5W (Tc) | - | ||
| 1+ $0.2610 5+ $0.2465 10+ $0.2320 更多的价格 | 555,555 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | P-Channel | 60 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 3V @ 250µA | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 1.7 nC @ 15 V | ±20V | 23 pF @ 25 V | 350mW (Ta) | - | ||
| 1+ $1.4400 5+ $1.3600 10+ $1.2800 更多的价格 | 543,899 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | P-Channel | 30 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 3V @ 250µA | 2.5A (Ta) | 4.5V, 10V | 78mOhm @ 3.2A, 10V | 15 nC @ 10 V | ±20V | 380 pF @ 15 V | 750mW (Ta) | - | ||
| 1+ $1.2960 5+ $1.2240 10+ $1.1520 更多的价格 | 513,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | N-Channel | 60 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 3V @ 250µA | 2.3A (Tc) | 4.5V, 10V | 156mOhm @ 1.9A, 10V | 6.8 nC @ 10 V | ±20V | 190 pF @ 30 V | 1.09W (Ta), 1.66W (Tc) | - | ||
 | 1+ $27.0000 5+ $25.5000 10+ $24.0000 更多的价格 | 500,335 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 4-UFBGA, WLCSP | 4-WLCSP (1.6x1.6) | P-Channel | 20 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 900mV @ 250µA | 5.9A (Ta) | 1.8V, 4.5V | 23mOhm @ 2A, 4.5V | 110 nC @ 10 V | ±10V | 2800 pF @ 10 V | 1.1W (Ta), 2.7W (Tc) | - | ||
 | 1+ $0.8100 5+ $0.7650 10+ $0.7200 更多的价格 | 483,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | SC-75, SOT-416 | SC-75A | N-Channel | 20 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 900mV @ 250µA | 500mA (Ta) | 1.8V, 4.5V | 700mOhm @ 600mA, 4.5V | 0.75 nC @ 4.5 V | ±6V | - | 150mW (Ta) | - | ||
| 1+ $1.4400 5+ $1.3600 10+ $1.2800 更多的价格 | 362,596 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | P-Channel | 60 V | Automotive | TrenchFET® | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | 1.7A (Tc) | 4.5V, 10V | 336mOhm @ 3.8A, 10V | 8.5 nC @ 10 V | ±20V | 265 pF @ 25 V | 2W (Tc) | AEC-Q101 | ||
| 1+ $1.6200 5+ $1.5300 10+ $1.4400 更多的价格 | 287,108 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | P-Channel | 40 V | Automotive | TrenchFET® | MOSFET (Metal Oxide) | - | 2.5V @ 250µA | 4.1A (Tc) | 4.5V, 10V | 94mOhm @ 10A, 10V | 12 nC @ 10 V | ±20V | 420 pF @ 20 V | 3W (Tc) | AEC-Q101 | ||
| 1+ $1.2600 5+ $1.1900 10+ $1.1200 更多的价格 | 267,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | P-Channel | 60 V | - | TrenchFET® | MOSFET (Metal Oxide) | - | 3V @ 250µA | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 1.7 nC @ 15 V | ±20V | 23 pF @ 25 V | 350mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | P-Channel | 30 V | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 2.5V @ 250µA | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 40 nC @ 10 V | ±20V | 2270 pF @ 15 V | 2.5W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 6-UFBGA | 6-microfoot | N-Channel | 8 V | TrenchFET® | MOSFET (Metal Oxide) | - | 800mV @ 250µA | 16A (Tc) | 1.2V, 4.5V | 23mOhm @ 1.5A, 4.5V | 26 nC @ 4.5 V | ±5V | 1470 pF @ 4 V | 2.77W (Ta), 13W (Tc) | ||||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | P-Channel | - | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 2.5V @ 250µA | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | - | ±20V | - | 2.5W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | P-Channel | 30 V | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 1.3V @ 250µA | 4.2A (Tc) | 4.5V, 10V | 55mOhm @ 4A, 10V | 9.5 nC @ 4.5 V | ±12V | 950 pF @ 15 V | 1.2W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23 | N-Channel | 30 V | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 1.4V @ 250µA | 5.6A (Tc) | 4.5V, 10V | 59mOhm @ 2.8A, 2.5V | 9.5 nC @ 4.5 V | ±12V | 820 pF @ 15 V | 1.4W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23 | N-Channel | - | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 1.4V @ 250µA | 5.6A (Tc) | 4.5V, 10V | 59mOhm @ 2.8A, 2.5V | - | ±12V | - | 1.4W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | N-Channel | 20 V | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 1.1V @ 250µA | 4.3A (Tc) | 2.5V, 4.5V | 27mOhm @ 2.2A, 4.5V | 10 nC @ 4.5 V | ±10V | 300 pF @ 10 V | 1W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23 | P-Channel | 20 V | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 900mV @ 250µA | 3A (Tc) | 2.5V, 4.5V | 56mOhm @ 1.7A, 4.5V | 12 nC @ 2.5 V | ±10V | 405 pF @ 10 V | 1W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | SOT-23 | P-Channel | - | - | TrenchFET® | MOSFET (Metal Oxide) | Standard | 900mV @ 250µA | 3A (Tc) | 2.5V, 4.5V | 56mOhm @ 1.7A, 4.5V | - | ±10V | - | 1W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | PowerPAK® SO-8 | PowerPAK® SO-8 | N-Channel | 40 V | TrenchFET® | MOSFET (Metal Oxide) | - | 2.2V @ 250µA | 60A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 51 nC @ 10 V | ±20V | 2230 pF @ 20 V | 5W (Ta), 54W (Tc) |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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