Automotive, AEC-Q101 系列, 单 FET,MOSFET

结果:
104
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
FET Type
Technology
FET Feature
Grade
Qualification
结果104
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Automotive, AEC-Q101
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图片产品详情单价可用性ECAD 模型Mounting TypeSeriesFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
NVD4813NHT4G
MOSFET N-CH 30V 7.6A/40A DPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
13mOhm @ 30A, 10V
10 nC @ 4.5 V
±20V
940 pF @ 12 V
1.27W (Ta), 35.3W (Tc)
NVTE4151PT1G
MOSFET P-CH 20V 0.76A SC-89
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数量
联系我们
PCB Symbol, Footprint & 3D Model
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Automotive, AEC-Q101
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760mA (Tj)
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NVTS4409NT1G
MOSFET N-CH 25V/8V 0.075A SC-70
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数量
联系我们
PCB Symbol, Footprint & 3D Model
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Automotive, AEC-Q101
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BUK9214-80EJ
MOSFET N-CH 80V DPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
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Automotive, AEC-Q101
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BUK9234-100EJ
MOSFET N-CH 100V DPAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
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Automotive, AEC-Q101
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NVMD3P03R2G
MOSFET 2P-CH 30V 2.34A 8SOIC
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
P-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
2.34A (Tj)
4.5V, 10V
85mOhm @ 3.05A, 10V
25 nC @ 10 V
±20V
750 pF @ 24 V
730mW (Ta)
NVMFS5C404NWFT3G-K
MOSFET N-CH 40V 53A/378A 5DFN
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
53A (Ta), 378A (Tc)
10V
0.7mOhm @ 50A, 10V
128 nC @ 10 V
±20V
8400 pF @ 25 V
3.9W (Ta), 200W (Tc)
NVD4815NT4G
MOSFET N-CH 30V 6.9A/35A DPAK-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
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2.5V @ 250µA
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
15mOhm @ 30A, 10V
6.6 nC @ 4.5 V
±20V
770 pF @ 12 V
1.26W (Ta), 32.6W (Tc)
NVMFS6B75NLWFT3G
MOSFET N-CH 100V 7A/28A 5DFN
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
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3V @ 250µA
7A (Ta), 28A (Tc)
4.5V, 10V
30mOhm @ 10A, 10V
11.3 nC @ 10 V
±16V
740 pF @ 25 V
3.5W (Ta), 56W (Tc)
NVMFS6B85NLWFT3G
MOSFET N-CH 100V 5.6A/19A 5DFN
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.4V @ 250µA
5.6A (Ta), 19A (Tc)
4.5V, 10V
46mOhm @ 10A, 10V
7.9 nC @ 10 V
±16V
480 pF @ 25 V
3.5W (Ta), 42W (Tc)
DMG3N60SJ3
MOSFET N-CH 650V 2.8A TO251
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
Automotive, AEC-Q101
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251
650 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
2.8A (Tc)
10V
3.5Ohm @ 1.5A, 10V
12.6 nC @ 10 V
±30V
354 pF @ 25 V
41W (Tc)
DMG7N65SCTI
MOSFET N-CH 650V 7.7A ITO220AB
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
Automotive, AEC-Q101
N-Channel
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
650 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
7.7A (Tc)
10V
1.4Ohm @ 2.5A, 10V
25.2 nC @ 10 V
±30V
886 pF @ 50 V
28W (Tc)
NVD4809NHT4G
MOSFET N-CH 30V 9A/58A DPAK-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
9A (Ta), 58A (Tc)
4.5V, 11.5V
9mOhm @ 30A, 10V
44 nC @ 11.5 V
±20V
2155 pF @ 12 V
1.3W (Ta), 52W (Tc)
NVMFS5C646NLWFT3G
MOSFET N-CH 60V 20A/93A 5DFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
60 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
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2V @ 250µA
20A (Ta), 93A (Tc)
4.5V, 10V
4.7mOhm @ 50A, 10V
33.7 nC @ 10 V
±20V
2164 pF @ 25 V
3.7W (Ta), 79W (Tc)
NVMFS6B03NT3G
MOSFET N-CH 100V 132A 5DFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
145A (Tc)
10V
4.8mOhm @ 20A, 10V
58 nC @ 10 V
±16V
4200 pF @ 50 V
3.9W (Ta), 198W (Tc)
NVMFS6B05NT3G
MOSFET N-CH 100V 104A 5DFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
114A (Tc)
10V
8mOhm @ 20A, 10V
44 nC @ 10 V
±16V
3100 pF @ 25 V
3.8W (Ta), 165W (Tc)
NVMFS6B05NWFT3G
MOSFET N-CH 100V 104A 5DFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
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4V @ 250µA
114A (Tc)
10V
8mOhm @ 20A, 10V
44 nC @ 10 V
±16V
3100 pF @ 25 V
3.8W (Ta), 165W (Tc)
NVTGS3455T1G
MOSFET N-CH 30V 3.5A 6-TSOP
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
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Automotive, AEC-Q101
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NVMFS6B03NLWFT3G
MOSFET N-CH 100V 20A 5DFN
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
3V @ 250µA
145A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
9.4 nC @ 10 V
±16V
5320 pF @ 25 V
3.9W (Ta), 198W (Tc)
NVMS4816NR2G
MOSFET N-CH 30V 6.8A 8SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
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MOSFET (Metal Oxide)
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3V @ 250µA
6.8A (Ta)
-
10mOhm @ 9A, 10V
9.2 nC @ 4.5 V
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1060 pF @ 25 V
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关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。