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- 单 FET，MOSFET
CoolSiC™ 系列, 单 FET，MOSFET
结果:
76
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Drain to Source Voltage (Vdss)
Package / Case
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
结果：76
搜索条目:
CoolSiC™
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Series | Operating Temperature | Grade | FET Feature | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Qualification | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiC (Silicon Carbide Junction Transistor) | 750 V | 98A (Tc) | 15V, 20V | PG-HDSOP-22-1 | 22-PowerBSOP Module | - | +23V, -5V | 2869 pF @ 500 V | 80 nC @ 18 V | 5.6V @ 14.9mA | 384W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | Automotive | - | SiCFET (Silicon Carbide) | 750 V | 98A (Tc) | 0V, 18V | PG-HDSOP-22 | 22-PowerBSOP Module | AEC-Q101 | +23V, -5V | 2869 pF @ 500 V | 80 nC @ 18 V | 5.6V @ 14.9mA | 384W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiC (Silicon Carbide Junction Transistor) | 750 V | 17A (Tc) | 15V, 20V | PG-HDSOP-22-1 | 22-PowerBSOP Module | - | +23V, -5V | 351 pF @ 500 V | 12 nC @ 18 V | 5.6V @ 1.7mA | 100W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiC (Silicon Carbide Junction Transistor) | 750 V | 47A (Tc) | 15V, 20V | PG-HDSOP-22-1 | 22-PowerBSOP Module | - | +23V, -5V | 1135 pF @ 500 V | 34 nC @ 18 V | 5.6V @ 6mA | 211W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 150°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 39A (Tc) | 18V | PG-TO247-4-3 | TO-247-4 | - | +23V, -5V | 1118 pF @ 400 V | 33 nC @ 18 V | 5.7V @ 6mA | 125W (Tc) | ||
 | 联系我们 | 480 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | Current Sensing | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | PG-TO247-4-1 | TO-247-4 | - | +20V, -10V | 1900 pF @ 800 V | 52 nC @ 15 V | 5.7V @ 10mA | 228W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -40°C ~ 175°C (TJ) | Automotive | - | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | - | PG-TO247-3 | TO-247-3 | AEC-Q101 | +20V, -7V | 2130 pF @ 800 V | 57 nC @ 15 V | 5.7V @ 10mA | 228W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | PG-TO247-4-1 | TO-247-4 | - | +23V, -7V | 454 pF @ 800 V | 13 nC @ 18 V | 5.7V @ 2.5mA | 94W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | Standard | SiCFET (Silicon Carbide) | 1200 V | 18A (Tc) | - | PG-TO263-7-12 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | +18V, -15V | 491 pF @ 800 V | 13.4 nC @ 18 V | 5.7V @ 2.5mA | 107W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 1700 V | 9.8A (Tc) | 12V, 15V | PG-TO263-7-13 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | +20V, -10V | 610 pF @ 1000 V | 11 nC @ 12 V | 5.7V @ 2.5mA | 107W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | PG-TO247-4-1 | TO-247-4 | - | +23V, -7V | 289 pF @ 800 V | 8.5 nC @ 18 V | 5.7V @ 1.6mA | 75W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | PG-TO247-3-41 | TO-247-3 | - | +23V, -7V | 454 pF @ 800 V | 13 nC @ 18 V | 5.7V @ 2.5mA | 94W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 150°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 20A (Tc) | 18V | PG-TO247-3-41 | TO-247-3 | - | +23V, -5V | 496 pF @ 400 V | 15 nC @ 18 V | 5.7V @ 3mA | 75W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | PG-TO247-3-41 | TO-247-3 | - | +20V, -10V | 1900 pF @ 800 V | 52 nC @ 15 V | 5.7V @ 10mA | 228W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V | PG-TO263-7-12 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | +23V, -5V | 1118 pF @ 400 V | 33 nC @ 18 V | 5.7V @ 6mA | 183W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 24A (Tc) | 18V | PG-TO247-3-41 | TO-247-3 | - | +20V, -2V | 624 pF @ 400 V | 19 nC @ 18 V | 5.7V @ 3.3mA | 104W (Tc) | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | PG-TO247-3-41 | TO-247-3 | - | +20V, -2V | 930 pF @ 400 V | 28 nC @ 18 V | 5.7V @ 5mA | 133W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | PG-TO247-4-3 | TO-247-4 | - | +20V, -2V | 1393 pF @ 400 V | 41 nC @ 18 V | 5.7V @ 7.5mA | 176W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | - | - | SiC (Silicon Carbide Junction Transistor) | 2000 V | 34A (Tc) | 15V, 18V | PG-TO247-4-U04 | TO-247-4 | - | +20V, -7V | - | 64 nC @ 18 V | 5.5V @ 7.7mA | 267W (Tc) | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | CoolSiC™ | -55°C ~ 175°C (TJ) | Automotive | - | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 18V | PG-TO247-3-41 | TO-247-3 | AEC-Q101 | +23V, -7V | 2130 pF @ 800 V | 59 nC @ 18 V | 5.7V @ 10mA | 228W (Tc) |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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