LITTLE FOOT® Series, FET,MOSFET 阵列

结果:
24
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power - Max
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
FET Feature
Configuration
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Mounting Type
Qualification
Technology
结果24
搜索条目:
LITTLE FOOT®
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureInput Capacitance (Ciss) (Max) @ VdsGradeTechnologySeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsPower - MaxPackage / CaseSupplier Device PackageQualificationConfiguration
SI7842DP-T1-GE3
MOSFET 2N-CH 30V 6.3A PPAK SO-8
1+
¥9.0000
5+
¥8.5000
10+
¥8.0000
数量
69,320 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
6.3A
22mOhm @ 7.5A, 10V
2.4V @ 250µA
20nC @ 10V
1.4W
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
-
2 N-Channel (Dual)
SI4916DY-T1-GE3
MOSFET 2N-CH 30V 10A 8-SOIC
1+
¥1.8000
5+
¥1.7000
10+
¥1.6000
数量
14,738 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
10A, 10.5A
18mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
3.3W, 3.5W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4816BDY-T1-GE3
MOSFET 2N-CH 30V 5.8A 8-SOIC
1+
¥72.0000
5+
¥68.0000
10+
¥64.0000
数量
8,320 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.8A, 8.2A
18.5mOhm @ 6.8A, 10V
3V @ 250µA
10nC @ 5V
1W, 1.25W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI7842DP-T1-E3
MOSFET 2N-CH 30V 6.3A PPAK SO-8
1+
¥126.0000
5+
¥119.0000
10+
¥112.0000
数量
2,920 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
6.3A
22mOhm @ 7.5A, 10V
2.4V @ 250µA
20nC @ 10V
1.4W
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
-
2 N-Channel (Dual)
SI4916DY-T1-E3
MOSFET 2N-CH 30V 10A 8-SOIC
1+
¥3.6000
5+
¥3.4000
10+
¥3.2000
数量
853 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
10A, 10.5A
18mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
3.3W, 3.5W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4914DY-T1-E3
MOSFET 2N-CH 30V 5.5A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.5A, 5.7A
23mOhm @ 7A, 10V
2.5V @ 250µA
8.5nC @ 4.5V
1.1W, 1.16W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4830CDY-T1-E3
MOSFET 2N-CH 30V 8A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
950pF @ 15V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
8A
20mOhm @ 8A, 10V
3V @ 1mA
25nC @ 10V
2.9W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SIA950DJ-T1-GE3
MOSFET 2N-CH 190V 0.95A SC-70-6
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
90pF @ 100V
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
190V
950mA
3.8Ohm @ 360mA, 4.5V
1.4V @ 250µA
4.5nC @ 10V
7W
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
-
2 N-Channel (Dual)
SI7872DP-T1-GE3
MOSFET 2N-CH 30V 6.4A PPAK SO-8
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
6.4A
22mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
1.4W
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
-
2 N-Channel (Half Bridge)
SI4816DY-T1-E3
MOSFET 2N-CH 30V 5.3A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.3A, 7.7A
22mOhm @ 6.3A, 10V
2V @ 250µA
12nC @ 5V
1W, 1.25W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI7872DP-T1-E3
MOSFET 2N-CH 30V 6.4A PPAK SO-8
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
6.4A
22mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
1.4W
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
-
2 N-Channel (Half Bridge)
SI4808DY-T1-GE3
MOSFET 2N-CH 30V 5.7A 8SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.7A
22mOhm @ 7.5A, 10V
800mV @ 250µA (Min)
20nC @ 10V
1.1W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Dual)
SI4830ADY-T1-E3
MOSFET 2N-CH 30V 5.7A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.7A
22mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
1.1W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4914BDY-T1-E3
MOSFET 2N-CH 30V 8.4A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
-
30V
8.4A, 8A
21mOhm @ 8A, 10V
2.7V @ 250µA
10.5nC @ 4.5V
2.7W, 3.1W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4830ADY-T1-GE3
MOSFET 2N-CH 30V 5.7A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.7A
22mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
1.1W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4818DY-T1-GE3
MOSFET 2N-CH 30V 5.3A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.3A, 7A
22mOhm @ 6.3A, 10V
800mV @ 250µA (Min)
12nC @ 5V
1W, 1.25W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Dual)
SI4818DY-T1-E3
MOSFET 2N-CH 30V 5.3A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.3A, 7A
22mOhm @ 6.3A, 10V
800mV @ 250µA (Min)
12nC @ 5V
1W, 1.25W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Dual)
SI4816DY-T1-GE3
MOSFET 2N-CH 30V 5.3A 8-SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
5.3A, 7.7A
22mOhm @ 6.3A, 10V
2V @ 250µA
12nC @ 5V
1W, 1.25W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4814BDY-T1-GE3
MOSFET 2N-CH 30V 10A 8SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
10A, 10.5A
18mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
3.3W, 3.5W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)
SI4814BDY-T1-E3
MOSFET 2N-CH 30V 10A 8SOIC
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
-
-
MOSFET (Metal Oxide)
LITTLE FOOT®
Logic Level Gate
30V
10A, 10.5A
18mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
3.3W, 3.5W
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
2 N-Channel (Half Bridge)

关于  FET,MOSFET 阵列

场效应晶体管(FET)是利用电场调节电流流动的电子器件。通过对栅极施加电压,可以改变漏极和源极之间的电导率。与双极晶体管不同,FET是单极性晶体管,意味着它们依赖于一种类型的载流子来进行操作。这可以是电子或空穴,但不能同时存在。 FET的一个关键优势是其在低频下具有很高的输入阻抗。这个特性源于FET的栅极端子不会吸引任何电流,因为它被设计成以电压驱动模式工作。因此,与类似配置的双极晶体管相比,FET的输入阻抗可以高出几个数量级。 场效应晶体管有多种类型,最常见的是结型场效应晶体管(JFET)和金属氧化物半导体场效应晶体管(MOSFET)。JFET利用反向偏置的pn结来控制电流流动,而MOSFET使用氧化层来隔离栅极和通道区域。 FET在电子领域有许多应用,包括放大器、开关、振荡器和电压稳压器。由于其具有高输入阻抗,FET经常用于低功耗电路中,其中低负载效应和信号质量是关键考虑因素。 总而言之,场效应晶体管(FET)是利用电场控制电流流动的电子器件。它们是单极性晶体管,依靠一种类型的载流子进行操作。FET在低频下具有高输入阻抗,非常适合在低功耗应用中使用,其中信号质量是关键因素。