| | | | | | | | | | | | | | | | | | | | | | | | |
| | POWER FIELD-EFFECT TRANSISTOR, 1 | | | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | N-Channel | TO-3P-3, SC-65-3 | TO-3P | - | MOSFET (Metal Oxide) | QFET® | - | 11A (Tc) | 5V @ 250µA | 900 V | 10V | 1.1Ohm @ 5.5A, 10V | 80 nC @ 10 V | ±30V | 3290 pF @ 25 V | 300W (Tc) | - |
| | POWER FIELD-EFFECT TRANSISTOR, 1 | | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | TO-261-4, TO-261AA | SOT-223-4 | - | MOSFET (Metal Oxide) | QFET® | - | 1.7A (Tc) | 4V @ 250µA | 100 V | 10V | 350mOhm @ 850mA, 10V | 7.5 nC @ 10 V | ±25V | 250 pF @ 25 V | 2W (Tc) | - |