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CoolSiC™+ Series, 单二极管

搜索结果
结果:
179
Manufacturer
Series
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Voltage - Forward (Vf) (Max) @ If
Current - Average Rectified (Io)
Supplier Device Package
Package / Case
Voltage - DC Reverse (Vr) (Max)
Operating Temperature - Junction
Reverse Recovery Time (trr)
Mounting Type
Speed
Diode Type
Grade
Qualification
Technology
结果：179
搜索条目:
CoolSiC™+
选择
图片产品详情单价可用性ECAD 模型Mounting TypeSeriesDiode TypeVoltage - DC Reverse (Vr) (Max)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Operating Temperature - JunctionPackage / CaseCurrent - Average Rectified (Io)Current - Reverse Leakage @ VrCapacitance @ Vr, FSupplier Device Package
IDH06S60C
IDH06S60C
Infineon Technologies
DIODE SIL CARB 600V 6A TO220-2-2
1+
$72.0000
5+
$68.0000
10+
$64.0000
更多的价格
数量
4,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2
6A
80 µA @ 600 V
280pF @ 1V, 1MHz
PG-TO220-2-2
IDH10SG60C
IDH10SG60C
Infineon Technologies
DIODE SIL CARB 600V 10A TO220-2
1+
$54.0000
5+
$51.0000
10+
$48.0000
更多的价格
数量
1,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
600 V
2.1 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2
10A
90 µA @ 600 V
290pF @ 1V, 1MHz
PG-TO220-2-2
IDC08S120EX1SA3
IDC08S120EX1SA3
Infineon Technologies
DIODE SIL CARB 1.2KV 7.5A WAFER
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
1200 V
1.8 V @ 7.5 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
7.5A
180 µA @ 1200 V
380pF @ 1V, 1MHz
Sawn on foil
IDC08S120EX7SA1
IDC08S120EX7SA1
Infineon Technologies
DIODE SIL CARB 1.2KV 7.5A WAFER
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
1200 V
1.8 V @ 7.5 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
7.5A
180 µA @ 1200 V
380pF @ 1V, 1MHz
Sawn on foil
IDH03SG60C
IDH03SG60C
Infineon Technologies
DIODE SIL CARB 600V 3A TO220-2-2
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
600 V
2.3 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2
3A
15 µA @ 600 V
60pF @ 1V, 1MHz
PG-TO220-2-2
IDC08S60CEX1SA3
IDC08S60CEX1SA3
Infineon Technologies
DIODE SIL CARBIDE 600V 8A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
8A
100 µA @ 600 V
310pF @ 1V, 1MHz
Die
IDV04S60CXKSA1
IDV04S60CXKSA1
Infineon Technologies
DIODE SIL CARB 600V 4A TO220FP
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
600 V
1.9 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2 Full Pack
4A
50 µA @ 600 V
130pF @ 1V, 1MHz
PG-TO220-2 Full Pack
IDD05SG60C
IDD05SG60C
Infineon Technologies
DIODE SIL CARB 600V 5A TO252-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
2.3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-252-3, DPak (2 Leads + Tab), SC-63
5A
30 µA @ 600 V
110pF @ 1V, 1MHz
PG-TO252-3
IDC08S60CEX1SA2
IDC08S60CEX1SA2
Infineon Technologies
DIODE SIL CARBIDE 600V 8A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
8A
100 µA @ 600 V
310pF @ 1V, 1MHz
Die
IDH09G65C5XKSA2
IDH09G65C5XKSA2
Infineon Technologies
DIODE SIL CARB 650V 9A TO220-2-1
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
650 V
1.7 V @ 9 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2
9A
160 µA @ 650 V
270pF @ 1V, 1MHz
PG-TO220-2-1
IDC08S60CEX7SA1
IDC08S60CEX7SA1
Infineon Technologies
DIODE SIL CARBIDE 600V 8A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
8A
100 µA @ 600 V
310pF @ 1V, 1MHz
Die
IDC04S60CEX1SA1
IDC04S60CEX1SA1
Infineon Technologies
DIODE SIL CARBIDE 600V 4A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.9 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
4A
50 µA @ 600 V
130pF @ 1V, 1MHz
Die
IDL10G65C5XUMA1
IDL10G65C5XUMA1
Infineon Technologies
DIODE SIL CARB 650V 10A VSON-4
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
650 V
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 150°C
4-PowerTSFN
10A
180 µA @ 650 V
300pF @ 1V, 1MHz
PG-VSON-4
IDH16S60CAKSA1
IDH16S60CAKSA1
Infineon Technologies
DIODE SIL CARB 600V 16A TO220-2
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-220-2
16A
200 µA @ 600 V
650pF @ 1V, 1MHz
PG-TO220-2-2
IDDD06G65C6XTMA1
IDDD06G65C6XTMA1
Infineon Technologies
DIODE SIL CARB 650V 18A HDSOP-10
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
650 V
-
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
10-PowerSOP Module
18A
20 µA @ 420 V
302pF @ 1V, 1MHz
PG-HDSOP-10-1
IDW12G65C5
IDW12G65C5
Infineon Technologies
DIODE SIL CARB 650V 12A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
CoolSiC™+
Silicon Carbide Schottky
650 V
1.7 V @ 12 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-247-3
12A
500 µA @ 650 V
360pF @ 1V, 1MHz
PG-TO247-3-41
IDC04S60CEX7SA1
IDC04S60CEX7SA1
Infineon Technologies
DIODE SIL CARBIDE 600V 4A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.9 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
4A
50 µA @ 600 V
130pF @ 1V, 1MHz
Die
IDC05S60CEX1SA1
IDC05S60CEX1SA1
Infineon Technologies
DIODE SIL CARBIDE 600V 5A DIE
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
Silicon Carbide Schottky
600 V
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
Die
5A
70 µA @ 600 V
240pF @ 1V, 1MHz
Die
IDB06S60C
IDB06S60C
Infineon Technologies
DIODE SIL CARB 600V 6A TO220-3
1+
$14.0400
5+
$13.2600
10+
$12.4800
更多的价格
数量
10,470 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
600 V
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 175°C
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
6A
80 µA @ 600 V
280pF @ 1V, 1MHz
PG-TO263-3-2
IDL08G65C5XUMA2
IDL08G65C5XUMA2
Infineon Technologies
DIODE SIL CARBIDE 650V 8A VSON-4
1+
$34.2000
5+
$32.3000
10+
$30.4000
更多的价格
数量
3,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
CoolSiC™+
650 V
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
-55°C ~ 150°C
4-PowerTSFN
8A
140 µA @ 650 V
250pF @ 1V, 1MHz
PG-VSON-4

关于  单二极管

单个整流二极管是专为只允许电流在一个方向上流动而设计的电子元件。这些二极管通常用于将交流电（AC）转换为直流电（DC），通过允许正半周期的交流信号通过，同时阻止负半周期的信号。 每个单个整流二极管的器件封装中只包含一个这样的功能。这些二极管通常用于电源电路、电压稳压器和电池充电器等应用中。它们的特征基于其最大正向电压、峰值反向电压和最大平均正向电流等级。 值得注意的是，用于其他用途的二极管（如齐纳二极管和可变电容二极管）在自己的产品系列中单独列出。这些二极管具有独特的特性，并为特定应用而设计。同样，具有多个二极管的单个封装的产品也会被单独列出。 总之，单个整流二极管是电子电路中将交流电转换为直流电的关键组件。通过仅允许电流在一个方向上流动，它们确保电子设备按预期运行。通过基于正向电压、反向电压和平均正向电流等级的规格，工程师可以选择最适合其电路需求的单个整流二极管。
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