CoolSiC™+ Series, 二极管阵列

结果:
13
Manufacturer
Series
Current - Reverse Leakage @ Vr
Voltage - Forward (Vf) (Max) @ If
Current - Average Rectified (Io) (per Diode)
Supplier Device Package
Package / Case
Voltage - DC Reverse (Vr) (Max)
Speed
Reverse Recovery Time (trr)
Mounting Type
Grade
Qualification
Technology
Diode Configuration
Operating Temperature - Junction
结果13
搜索条目:
CoolSiC™+
选择
图片产品详情单价可用性ECAD 模型Mounting TypePackage / CaseSupplier Device PackageGradeSeriesDiode ConfigurationVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io) (per Diode)Voltage - Forward (Vf) (Max) @ IfSpeedCurrent - Reverse Leakage @ VrOperating Temperature - JunctionReverse Recovery Time (trr)QualificationTechnology
IDW30G120C5BFKSA1
DIODE GEN PURP 1200V 44A TO247-3
1+
¥333.0000
5+
¥314.5000
10+
¥296.0000
数量
4,800 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
1200 V
44A (DC)
1.65 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
124 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW10G120C5BFKSA1
DIODE SCHOTTKY 1.2KV 10A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3-41
-
CoolSiC™+
1 Pair Common Cathode
1200 V
17A
1.65 V @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
40 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW20G120C5BFKSA1
DIODE 1.2KV 20A RAPID2 TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
1200 V
31A
1.65 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
83 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW15G120C5BFKSA1
DIODE SCHOTKY 1200V 24A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3-41
-
CoolSiC™+
1 Pair Common Cathode
1200 V
24A (DC)
1.6 V @ 7.5 A
Fast Recovery =< 500ns, > 200mA (Io)
62 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW40G120C5BFKSA1
DIODE GEN PURP 1200V 55A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
1200 V
55A (DC)
1.65 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
166 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
SDP20S30
DIODE ARRAY SCHOTTKY 300V TO220
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PG-TO220-3-1
-
CoolSiC™+
1 Pair Common Cathode
300 V
10A (DC)
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
200 µA @ 300 V
-55°C ~ 175°C
0 ns
-
SiC (Silicon Carbide) Schottky
IDW20G65C5BXKSA1
DIODE SCHOTTKY 650V 10A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
650 V
10A (DC)
1.7 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
180 µA @ 650 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW24G65C5BXKSA1
DIODE SCHOTTKY 650V 12A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
650 V
12A (DC)
1.7 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
190 µA @ 650 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW32G65C5BXKSA1
DIODE SCHOTTKY 650V 16A TO247-3
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
650 V
16A (DC)
1.7 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
200 µA @ 650 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW40G65C5BXKSA1
DIODE SCHOTTKY 650V 40A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
650 V
20A (DC)
1.7 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
210 µA @ 650 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW20S120FKSA1
DIODE SCHOTTKY 1200V 10A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
1200 V
10A (DC)
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
240 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
IDW30S120FKSA1
DIODE SCHOTTKY 1200V 15A TO247-3
联系我们
数量
联系我们
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PG-TO247-3
-
CoolSiC™+
1 Pair Common Cathode
1200 V
15A (DC)
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
305 µA @ 1200 V
-55°C ~ 175°C
-
-
SiC (Silicon Carbide) Schottky
SDB20S30
DIODE ARRAY SCHOTTKY 300V D2PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO220-3-45
-
CoolSiC™+
1 Pair Common Cathode
300 V
10A (DC)
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
200 µA @ 300 V
-55°C ~ 175°C
0 ns
-
SiC (Silicon Carbide) Schottky

关于  二极管阵列

二极管和整流器阵列是由两个或多个独立二极管封装在一个单一封装中的电子元件。这些阵列以紧凑的形式提供了多个二极管,适用于各种应用。 对于二极管和整流器阵列的表征与单独离散二极管类似。用于描述这些阵列的关键属性包括正向电压评级、反向电压评级、平均整流电流和技术(如硅或肖特基)。这些规格帮助工程师选择符合其特定电路需求的适当阵列。 除了这些标准规格外,二极管和整流器阵列还具有“二极管配置”属性。该属性描述了封装内部二极管之间的任何连接方式。它指示二极管是并联连接、串联连接还是具有其他特定配置。通过了解二极管配置,工程师可以确定阵列在不同电路情况下的行为,并优化其使用。 值得注意的是,具有全桥配置的二极管阵列通常由四个二极管组成桥式电路,被视为一个单独的产品系列。这种全桥二极管阵列具有独特的特性,专门从一般的二极管和整流器阵列类别中排除。 总之,二极管和整流器阵列是将多个二极管集成到一个单一封装中的电子元件。它们的特征属性包括正向电压评级、反向电压评级、平均整流电流和技术。"二极管配置"属性描述了封装内部二极管之间的连接方式。了解这些规格有助于工程师选择最适合其电路需求的阵列,而全桥二极管阵列被视为一个独立的产品系列。